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LY616416

5V 64k X 16 bit high speed cmos sram

厂商名称:Lyontek

厂商官网:http://www.lyontek.com.tw/index.html

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®
LY616416
Rev. 1.1
5V 64K X 16 BIT HIGH SPEED CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Description
Initial Issue
Revised Test Condition of I
CC
Revised
FEATURES
&
ORDERING INFORMATION
Lead free and green package available
to
Green package
available
Deleted T
SOLDER
in
ABSOLUTE MAXIMUN RATINGS
Added packing type in
ORDERING INFORMATION
Issue Date
Aug.29.2007
Aug.28.2009
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
®
LY616416
Rev. 1.1
5V 64K X 16 BIT HIGH SPEED CMOS SRAM
GENERAL DESCRIPTION
The LY616416 is a 1,048,576-bit low power CMOS
static random access memory organized as 65,536
words by 16 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY616416 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY616416 operates from a single power
supply of 5V and all inputs and outputs are fully TTL
compatible
FEATURES
Fast access time : 15/20ns
Low power consumption:
Operating current : 140/110mA(MAX.)
Standby current :
3mA(MAX. for 15/20ns)
100µA( (MAX. for 15/20ns LL version)
Single 5V power supply
All outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 2.0V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
PRODUCT FAMILY
Product
Family
LY616416
LY616416(E)
LY616416(I)
LY616416(LL)
LY616416(LLE)
LY616416(LLI)
Operating
Temperature
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
Vcc
Range
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
Speed
15/20ns
15/20ns
15/20ns
15/20ns
15/20ns
15/20ns
Power Dissipation
Standby(I
SB1
)
Operating(Icc)
3mA(MAX.)
140/110mA(MAX.)
3mA(MAX.)
140/110mA(MAX.)
3mA(MAX.)
140/110mA(MAX.)
100µA(MAX.)
140/110mA(MAX.)
100µA(MAX.)
140/110mA(MAX.)
100µA(MAX.)
140/110mA(MAX.)
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY616416
Rev. 1.1
5V 64K X 16 BIT HIGH SPEED CMOS SRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0 - A15
CE#
WE#
OE#
LB#
UB#
V
CC
DQ0 – DQ15 Data Inputs/Outputs
DECODER
64Kx16
MEMORY ARRAY
A0-A15
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
V
SS
I/O DATA
CIRCUIT
COLUMN I/O
CE#
WE#
OE#
LB#
UB#
CONTROL
CIRCUIT
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY616416
Rev. 1.1
5V 64K X 16 BIT HIGH SPEED CMOS SRAM
PIN CONFIGURATION
A4
A3
A2
A1
A0
CE#
DQ0
DQ1
DQ2
DQ3
Vcc
Vss
DQ4
DQ5
DQ6
DQ7
WE#
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
44
43
42
41
40
39
38
37
A5
A6
A7
OE#
UB#
LB#
DQ15
DQ14
DQ13
DQ12
Vss
Vcc
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
LY616416
9
10
11
12
13
14
15
16
17
18
19
20
21
22
36
35
34
33
32
31
30
29
28
27
26
25
24
23
TSOP II
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 6.5
-0.5 to V
CC
+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
®
LY616416
Rev. 1.1
5V 64K X 16 BIT HIGH SPEED CMOS SRAM
TRUTH TABLE
MODE
Standby
Output Disable
Read
CE#
H
L
L
L
L
L
L
L
L
OE#
X
H
X
L
L
L
X
X
X
WE# LB#
X
H
X
H
H
H
L
L
L
X
X
H
L
H
L
L
H
L
UB#
X
X
H
H
L
L
H
L
L
I/O OPERATION
DQ0-DQ7
DQ8-DQ15
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
D
OUT
High – Z
High – Z
D
OUT
D
OUT
D
OUT
D
IN
High – Z
High – Z
D
IN
D
IN
D
IN
SUPPLY CURRENT
I
SB1
I
CC
I
CC
Write
Note:
I
CC
H = V
IH
, L = V
IL
, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
MIN.
TYP.
PARAMETER
Supply Voltage
V
CC
4.5
5.0
*1
Input High Voltage
V
IH
0.6*Vcc
-
*2
Input Low Voltage
V
IL
- 0.3
-
Input Leakage Current
I
LI
V
CC
V
IN
V
SS
-1
-
Output Leakage
V
CC
V
OUT
V
SS
,
I
LO
-1
-
Current
Output Disabled
Output High Voltage
V
OH
I
OH
= -4mA
2.4
-
Output Low Voltage
V
OL
I
OL
= 8mA
-
-
Cycle time = Min.
15
-
100
Average Operating
I
CC
CE# = V
IL
, I
I/O
= 0mA
Power supply Current
20
-
80
Others at V
IL
or V
IH
15/20
-
0.1
Standby Power
CE#
V
CC
- 0.2V
I
SB1
Supply Current
Others at 0.2V or V
CC
-0.2V 15/20LL
-
20
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
5. 1mA for special request
6. 50µA for special request
*4
MAX.
5.5
V
CC
+0.3
0.8
1
1
-
0.4
140
110
3*
6
100*
5
UNIT
V
V
V
µA
µA
V
V
mA
mA
mA
µA
CAPACITANCE
(T
A
= 25
, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
8
10
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
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参数对比
与LY616416相近的元器件有:LY616416E、LY616416MV、LY616416LLI、LY616416I、LY616416UV、LY616416ML、LY616416UL、LY616416LLE、LY616416LL。描述及对比如下:
型号 LY616416 LY616416E LY616416MV LY616416LLI LY616416I LY616416UV LY616416ML LY616416UL LY616416LLE LY616416LL
描述 5V 64k X 16 bit high speed cmos sram 5V 64k X 16 bit high speed cmos sram 5V 64k X 16 bit high speed cmos sram 5V 64k X 16 bit high speed cmos sram 5V 64k X 16 bit high speed cmos sram 5V 64k X 16 bit high speed cmos sram 5V 64k X 16 bit high speed cmos sram 5V 64k X 16 bit high speed cmos sram 5V 64k X 16 bit high speed cmos sram 5V 64k X 16 bit high speed cmos sram
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